FGH40T65UQDF
Overview
FGH40T65UQDF Unit VCES VGES Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage 650 V ±20 V ±30 V IC Collector Current TC = 25°C 80 A TC = 100°C 40 A ILM (Note 1) Pulsed Collector Current TC = 25°C 120 A ICM (Note 2) Pulsed Collector Current 120 A IF Diode Forward Current TC = 25°C 40 A Diode Forward Current TC = 100°C 20 A IFM Pulsed Diode Maximum Forward Current 60 A PD Maximum Power Dissipation TC = 25°C 231 W TC = 100°C 115 W TJ Operating Junction Temperature -55 to +175 °C TSTG Storage Temperature Range -55 to +175 °C TL Maximum Lead Temp. for Soldering Purposes, 1.
- Max Junction Temperature 175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.33 V (Typ.) @ IC = 40 A
- 100% of the Parts Tested for ILM
- High Input Impedance
- Fast Switching
- Tighten Parameter Distribution
- This Device is Pb-Free and is RoHS Compliant
