FGHL75T65LQDT
FGHL75T65LQDT is IGBT manufactured by onsemi.
IGBT
- Field Stop, Trench
75 A, 650 V
Description Field stop 4th generation Low Vce(sat) IGBT technology and Full current rated copak Diode technology.
Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co- efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(Sat) = 1.15 V (Typ.) @ IC = 75 A
- 100% Of The Part Are Tested For ILM (Note 2)
- Smooth & Optimized Switching
- Tight Parameter Distribution
- Co- Packed With Soft And Fast Recovery Diode
- Ro HS pliant
Typical Applications
- Solar Inverter
- UPS, ESS
- PFC, Converters
MAXIMUM RATINGS
Parameter Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage Collector Current @ TC = 25°C (Note 1) Collector Current @ TC = 100°C Pulsed Collector Current (Note 2) Pulsed Collector Current (Note 3) Diode Forward Current @ TC = 25°C (Note 1)
Symbol VCES VGES
ILM ICM IF
Value 650 ±20 ±30 80 75 300 300 80
Unit V V
Diode Forward Current @ TC = 100°C
Pulsed Diode Maximum Forward Current
Maximum Power Dissipation @ TC = 25°C
Maximum Power Dissipation @ TC = 100°C
Operating Junction Temperature / Storage Temperature...
