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FQP17P10 - P-Channel MOSFET

Key Features

  • 16.5 A,.
  • 100 V, RDS(on) = 190 mW (Max. ) at VGS =.
  • 10 V, ID =.
  • 8.25 A.
  • Low Gate Charge (Typ. 30 nC).
  • Low Crss (Typ. 100 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number FQP17P10
Manufacturer onsemi
File Size 351.29 KB
Description P-Channel MOSFET
Datasheet download datasheet FQP17P10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, QFET) -100 V, -16.5 A, 190 mW FQP17P10 This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • −16.5 A, −100 V, RDS(on) = 190 mW (Max.) at VGS = −10 V, ID = −8.25 A • Low Gate Charge (Typ. 30 nC) • Low Crss (Typ.