FQP17P10 Datasheet P-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – P-Channel, QFET) -100 V, -16.5 A, 190 mW FQP17P10 This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Datasheet Details

Part number	FQP17P10
Manufacturer	onsemi
File Size	351.29 KB
Description	P-Channel MOSFET
Datasheet	FQP17P10-ONSemiconductor.pdf

Key Features

16.5 A,.
100 V, RDS(on) = 190 mW (Max. ) at VGS =.
10 V, ID =.
8.25 A.
Low Gate Charge (Typ. 30 nC).
Low Crss (Typ. 100 pF).
100% Avalanche Tested.
175°C Maximum Junction Temperature Rating.
This is a Pb.
Free Device.

FQP17P10 Distributor

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