FQP17P10 Description
MOSFET P-Channel, QFET) -100 V, -16.5 A, 190 mW FQP17P10 This P−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio...
FQP17P10 Key Features
- 16.5 A, -100 V, RDS(on) = 190 mW (Max.) at VGS = -10 V
- Low Gate Charge (Typ. 30 nC)
- Low Crss (Typ. 100 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating
- This is a Pb-Free Device