HGTG11N120CND Datasheet N-channel IGBT

Manufacturer: onsemi

Overview: NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 43 A, 1200 V HGTG11N120CND The HGTG11N120CND is a Non− Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family.

Datasheet Details

Part number	HGTG11N120CND
Manufacturer	onsemi
File Size	435.88 KB
Description	N-Channel IGBT
Datasheet	HGTG11N120CND-ONSemiconductor.pdf

General Description

Symbol HGTG11N120CND Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 1200 V IC25 43 A IC110 22 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (Figure 2) Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C ICM VGES VGEM SSOA PD 80 ±20 ±30 55 A at 1200 V 298 2.38

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching.

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