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HGTG40N60B3 Datasheet N-Channel IGBT

Manufacturer: onsemi

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General Description

Symbol Ratings Units Collector to Emitter Voltage BVCES 600 V Collector Current Continuous At TC = 25°C At TC = 110°C IC25 70 A IC110 40 Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous ICM 330 A VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Switching Safe Operating Area at TJ = 150°C, Figure 3 SSOA 100 A at 600 V Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C PD 290 W 2.33 W/°C Reverse Voltage Avalanche Energy EARV 100 mJ Operating and Storage Junction Temperature Range TJ, TSTG −55 to 150 °C Maximum Lead Tempe

Overview

UFS Series N-Channel IGBT 70 A, 600 V HGTG40N60B3 The HGTG40N60B3 is a MOS gated high voltage switching device combining the.

Key Features

  • of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on.
  • state conduction loss of a bipolar transistor. The much lower on.
  • state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching.

📁 Similar Datasheet

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Harris Logo HGTG40N60B3 UFS Series N-Channel IGBT Harris

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