HUF75639G3 - N-Channel Power MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	HUF75639G3
Manufacturer	ON Semiconductor
File Size	860.75 KB
Description	N-Channel Power MOSFET
Datasheet	HUF75639G3 Datasheet
Additional preview pages of the HUF75639G3 datasheet.

Product details

Description

Symbol Ratings Units Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20 kW) (Note 1) Gate to Source Voltage Drain Current Continuous (Figure 2) Pulsed Drain Current Pulsed Avalanche Rating Power Dissipation Derate Above 25°C VDSS VDGR VGS ID IDM EAS PD 100 V 100 V ±20 V 56 Figure 4 Figures 6, 14, 15 200 1.35 V V V A W W/°C Operating and Storage Temperature TJ, TSTG 55 to 175°C °C Maximum Temperature for Soldering Leads at 0.063in (1.6 mm) from Case for 10s TL

Features

56 A, 100 V.
Simulation Models.
Temperature Compensated PSPICE® and SABER™ Electrical Models.
Spice and Saber Thermal Impedance Models.
www. onsemi. com.
Peak Current vs Pulse Width Curve.
UIS Rating Curve.
Related Literature.
TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant TO.
247.
3LD CAS.

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Published: Oct 11, 2024 |