| Part number | HUF75639S3 |
|---|---|
| Manufacturer | ON Semiconductor |
| File Size | 860.75 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 HUF75639S3 Datasheet
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| Note |
This datasheet PDF includes multiple part numbers: HUF75639S3, HUF75639G3. Please refer to the document for exact specifications by model. |
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Symbol Ratings Units Drain to Source Voltage (Note 1) Drain to Gate Voltage (RGS = 20 kW) (Note 1) Gate to Source Voltage Drain Current Continuous (Figure 2) Pulsed Drain Current Pulsed Avalanche Rating Power Dissipation Derate Above 25°C VDSS VDGR VGS ID IDM EAS PD 100 V 100 V ±20 V 56 Figure 4 Figures 6, 14, 15 200 1.35 V V V A W W/°C Operating and Storage Temperature TJ, TSTG 55 to 175°C °C Maximum Temperature for Soldering Leads at 0.063in (1.6 mm) from Case for 10s TL
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