HUF75639S3S Overview
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor...
HUF75639S3S Key Features
- 56A, 100V
- Simulation Models
- Temperature pensated PSPICETM and SABER© Electrical Models
- Spice and Saber Thermal Impedance Models
- Intersil
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface Mount ponents to PC Boards”
