IRFU220B Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch...
IRFU220B Key Features
- 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V
- Low gate charge ( typical 12 nC)
- Low Crss ( typical 10 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability