Datasheet Details
| Part number | IRFU220B |
|---|---|
| Manufacturer | onsemi |
| File Size | 536.65 KB |
| Description | 200V N-Channel MOSFET |
| Datasheet |
 IRFU220B Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology.
Key Features
- 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V.
- Low gate charge ( typical 12 nC).
- Low Crss ( typical 10 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability D D ! GS D-PAK IRFR Series GDS I-PAK IRFU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, Tstg TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain.