| Part Number | IRFU220B Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o.
* * * * * * 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! * ◀ ▲ * * G S D-PAK IRFR Series I-PAK G D S IRFU Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VG. |
IRFU220B Datasheet PDF
The IRFU220B is a 200V N-Channel MOSFET.
| Part Number | IRFU220B Datasheet |
|---|---|
| Description | 200V N-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to min.
* 4.6A, 200V, RDS(on) = 0.8Ω @VGS = 10 V * Low gate charge ( typical 12 nC) * Low Crss ( typical 10 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability D D ! GS D-PAK IRFR Series GDS I-PAK IRFU Series Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS. |
| Part Number | IRFU220B Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lo.
*With TO-251(IPAK) packaging *Uninterruptible power supply *High speed switching *Hard switched and high frequency circuits *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRFU220B *APPLICATIONS *Switching applicatio. |