ISL9V3036S3ST-F085C Datasheet | onsemi

Features - SCIS Energy = 300 m J at TJ = 25°C - Logic Level Gate Drive - AEC- Q101 Qualified and PPAP Capable - These Devices are Pb- Free and are Ro HS pliant Applications - Automotive Ignition Coil Driver Circuits - High Current Ignition System - Coil on Plug Applications MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Collector to Emitter Breakdown Voltage BVCER (IC = 1 m A) Emitter to Collector Voltage - Reverse BVECS Battery Condition (IC = 10 m A) ISCIS = 14.2 A, L = 3.0 m Hy, RGE = 1 k W, TC = 25°C (Note 1) ESCIS25 300 m J ISCIS = 10.6 A, L = 3.0 m Hy, RGE = 1 k W, TC = 150°C (Note 2) ESCIS150 170 m J Collector Current Continuous, at VGE = 4.0 V, TC = 25°C Collector Current Continuous, at VGE = 4.0 V, TC = 110°C Gate to Emitter Voltage Continuous Power Dissipation Total, TC = 25°C Power Dissipation Derating, TC > 25°C Operating Junction and Storage Temperature IC25 IC110 VGEM PD PD TJ, TSTG ±10 150 1.10 - 40 to...