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K3816 - 2SK3816

Key Features

  • ON-resistance RDS(on)1=20mΩ(typ. ).
  • Input capacitance Ciss=1780pF(typ. ).
  • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 40 160 1.65 50 Unit V V A A W W Continued on next page. Package Dimensions unit : mm (typ) 7537-001 Package Dimensio.

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Datasheet Details

Part number K3816
Manufacturer onsemi
File Size 203.17 KB
Description 2SK3816
Datasheet download datasheet K3816 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8054A 2SK3816 N-Channel Power MOSFET 60V, 40A, 26mΩ, TO-262-3L/TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=20mΩ(typ.) • Input capacitance Ciss=1780pF(typ.) • 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 60 ±20 40 160 1.65 50 Unit V V A A W W Continued on next page. Package Dimensions unit : mm (typ) 7537-001 Package Dimensions unit : mm (typ) 7535-001 2SK3816-1E 10.0 4.5 8.0 1.3 10.0 4 4.5 1.3 2SK3816-DL-1E 8.0 0.9 1.75 1.4 9.2 1.2 13.4 0.9 1.75 3.0 9.2 1.2 1.35 7.9 7.9 5.3 5.3 3.0 1.47 1.27 0.8 123 2.