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KSA708 - PNP Epitaxial Silicon Transistor

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Datasheet Details

Part number KSA708
Manufacturer onsemi
File Size 202.06 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet KSA708 Datasheet

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DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor KSA708 Low Frequency Amplifier & Medium Speed Switching  Complement to KSC1008  Collector−Base Voltage: VCBO = −80 V  Collector Power Dissipation: PC = 800 mW  Suffix “−C” means Center Collector (1. Emitter 2. Collector 3. Base) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.) Symbol Parameter Ratings Unit VCBO Collector−Base Voltage −80 V VCEO Collector−Emitter Voltage −60 V VEBO Emitter−Base Voltage −8 V IC Collector Current −700 mA PC Collector Power Dissipation 800 mW TJ Junction Temperature 150 C TSTG Storage Temperature −55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device.