The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
DATA SHEET www.onsemi.com
PNP Epitaxial Silicon Transistor
KSA708
Low Frequency Amplifier & Medium Speed Switching
Complement to KSC1008 Collector−Base Voltage: VCBO = −80 V Collector Power Dissipation: PC = 800 mW Suffix “−C” means Center Collector
(1. Emitter 2. Collector 3. Base)
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.)
Symbol
Parameter
Ratings
Unit
VCBO Collector−Base Voltage
−80
V
VCEO Collector−Emitter Voltage
−60
V
VEBO Emitter−Base Voltage
−8
V
IC
Collector Current
−700
mA
PC
Collector Power Dissipation
800
mW
TJ
Junction Temperature
150
C
TSTG Storage Temperature
−55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.