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NPN Epitaxial Silicon Transistor
KSC2383
ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.)
Symbol
Parameter
Value
Unit
VCBO
Collector−Base Voltage
160
V
VCEO
Collector−Emitter Voltage
160
V
VEBO
Emitter−Base Voltage
6
V
IC
Collector Current
1
A
IB
Base Current
0.5
A
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) (Note 1)
Symbol
Parameter
Value
Unit
PD
Power Dissipation
Derate Above 25_C
900
mW
7.