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KSC2383 - NPN Epitaxial Silicon Transistor

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Datasheet Details

Part number KSC2383
Manufacturer onsemi
File Size 290.58 KB
Description NPN Epitaxial Silicon Transistor
Datasheet download datasheet KSC2383 Datasheet

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NPN Epitaxial Silicon Transistor KSC2383 ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 160 V VCEO Collector−Emitter Voltage 160 V VEBO Emitter−Base Voltage 6 V IC Collector Current 1 A IB Base Current 0.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) (Note 1) Symbol Parameter Value Unit PD Power Dissipation Derate Above 25_C 900 mW 7.