KSC2383 Description
NPN Epitaxial Silicon Transistor KSC2383 RATINGS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Value Unit VCBO Collector−Base Voltage 160 V VCEO Collector−Emitter Voltage 160 V VEBO Emitter−Base Voltage 6 V IC Collector Current 1 A IB Base Current 0.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage...