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LM9013G, LM9013H
Preferred Devices
Amplifier Transistors
NPN Silicon
• Moisture Sensitivity Level: 1
MAXIMUM RATINGS Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current – Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
25 25 3.0 1000
Vdc Vdc Vdc mAdc
625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
PD TJ, Tstg
1.5 12
–55 to +150
Watts mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, (Note 1.) Junction to Ambient
RθJA
200 °C/W
Thermal Resistance, Junction to Case
RθJC
83.3 °C/W
1. RqJA is measured with the device soldered into a typical printed circuit board.
LM9013G Datasheet
