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LM9013H - Amplifier Transistors

Download the LM9013H datasheet PDF. This datasheet also covers the LM9013G variant, as both devices belong to the same amplifier transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (LM9013G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LM9013H
Manufacturer onsemi
File Size 30.45 KB
Description Amplifier Transistors
Datasheet download datasheet LM9013H Datasheet

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Other Datasheets by onsemi

Part Number Description
LM9013G Amplifier Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LM9013G, LM9013H Preferred Devices Amplifier Transistors NPN Silicon • Moisture Sensitivity Level: 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD 25 25 3.0 1000 Vdc Vdc Vdc mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 1.5 12 –55 to +150 Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, (Note 1.) Junction to Ambient RθJA 200 °C/W Thermal Resistance, Junction to Case RθJC 83.3 °C/W 1. RqJA is measured with the device soldered into a typical printed circuit board.