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MBR2H200SFT3G

Manufacturer: onsemi

MBR2H200SFT3G datasheet by onsemi.

MBR2H200SFT3G datasheet preview

MBR2H200SFT3G Datasheet Details

Part number MBR2H200SFT3G
Datasheet MBR2H200SFT3G-ONSemiconductor.pdf
File Size 63.12 KB
Manufacturer onsemi
Description Surface Mount Schottky Power Rectifier
MBR2H200SFT3G page 2 MBR2H200SFT3G page 3

MBR2H200SFT3G Overview

MBR2H200SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where pact size and weight are critical to the system. Because of its small size, it is ideal for use...

MBR2H200SFT3G Key Features

  • Guardring for Stress Protection
  • Low Forward Voltage
  • Epoxy Meets UL 94 V-0
  • Package Designed for Optimal Automated Board Assembly
  • These are Pb-Free Devices
  • Reel Options: MBR2H200SFT3G = 10,000 per 13 in reel/8 mm tape
  • Device Marking: L2J
  • Polarity Designator: Cathode Band
  • Weight: 11.7 mg (approximately)
  • Case: Epoxy, Molded
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