MBR3100RL Description
MBR3100 Preferred Device Axial Lead Rectifier . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry.
MBR3100RL Key Features
- Low Reverse Current
- Low Stored Charge, Majority Carrier Conduction
- Low Power Loss/High Efficiency
- Highly Stable Oxide Passivated Junction
- Guard-Ring for Stress Protection
- Low Forward Voltage
- 150°C Operating Junction Temperature
- High Surge Capacity
- Case: Epoxy, Molded
- Weight: 1.1 gram (approximately)