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MBR3100
Preferred Device
Axial Lead Rectifier
. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. • Low Reverse Current • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Guard-Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • High Surge Capacity
Mechanical Characteristics:
http://onsemi.com
SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS
• Case: Epoxy, Molded • Weight: 1.
MBR3100RL Datasheet
