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MBR3100RL Datasheet Schottky Barrier Rectifier

Manufacturer: onsemi

Overview: MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.

Key Features

  • epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes.
  • Low Reverse Current.
  • Low Stored Charge, Majority Carrier Conduction.
  • Low Power Loss/High Efficiency.
  • Highly Stable Oxide Passivated Junction.
  • Guard-Ring for Stress Protection.
  • Low Forward Voltage.
  • 150°C Operating Junction Temper.

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