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MBR340RL - SCHOTTKY BARRIER RECTIFIER

Key Features

  • epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low.
  • voltage, high.
  • frequency inverters, free wheeling diodes, and polarity protection diodes. http://onsemi. com.
  • Extremely Low VF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction.

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Datasheet Details

Part number MBR340RL
Manufacturer onsemi
File Size 58.96 KB
Description SCHOTTKY BARRIER RECTIFIER
Datasheet download datasheet MBR340RL Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. http://onsemi.com • • • • Extremely Low VF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 40 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.