MBR340 Datasheet | onsemi

Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. Features - Extremely Low VF - Low Power Loss/High Efficiency - Highly Stable Oxide Passivated Junction - Low Stored Charge, Majority Carrier Conduction - Pb- Free Packages are Available- Mechanical Characteristics: - Case: Epoxy, Molded - Weight: 1.1 Gram (Approximately) - Finish: All External Surfaces Corrosion...