| Part Number | MBR340 |
|---|---|
| Manufacturer | onsemi |
| Overview |
MBR340
Preferred Device
Axial Lead Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction .
epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low *voltage, high *frequency inverters, free wheeling diodes, and polarity protection diodes. Features * Extremely Low VF * Low Power Loss/High Efficiency * Highly Stable Oxide Passivated . |