MBR340 Description
MBR340 Preferred Device Axial Lead Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry.
MBR340 Key Features
- Extremely Low VF
- Low Power Loss/High Efficiency
- Highly Stable Oxide Passivated Junction
- Low Stored Charge, Majority Carrier Conduction
- Pb-Free Packages are Available
- Case: Epoxy, Molded
- Weight: 1.1 Gram (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
- Lead Temperature for Soldering Purposes
- Polarity: Cathode indicated by Polarity Band