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MBR5025L - Power Rectifier

Key Features

  • Very Low Forward Voltage Drop (Max 0.58 V @ 100°C).
  • Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns).
  • 150°C Operating Junction Temperature.
  • Specially Designed for.

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Datasheet Details

Part number MBR5025L
Manufacturer onsemi
File Size 107.60 KB
Description Power Rectifier
Datasheet download datasheet MBR5025L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MBR5025L Preferred Device SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Very Low Forward Voltage Drop (Max 0.58 V @ 100°C) • Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns) • 150°C Operating Junction Temperature • Specially Designed for SWITCHMODE Power Supplies with Operating Frequency up to 300 kHz Mechanical Characteristics • Case: Epoxy, Molded • Weight: 4.3 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max.