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MBRAF1100T3G - Schottky Power Rectifier

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount.

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Datasheet Details

Part number MBRAF1100T3G
Manufacturer onsemi
File Size 65.97 KB
Description Schottky Power Rectifier
Datasheet download datasheet MBRAF1100T3G Datasheet
Additional preview pages of the MBRAF1100T3G datasheet.

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Full PDF Text Transcription

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MBRAF1100T3G Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
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