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MBRAF2H100 - Surface Mount Schottky Power Rectifier

Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount.

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Datasheet Details

Part number MBRAF2H100
Manufacturer onsemi
File Size 55.51 KB
Description Surface Mount Schottky Power Rectifier
Datasheet download datasheet MBRAF2H100 Datasheet
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Full PDF Text Transcription

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MBRAF2H100 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
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