MBRF20200CT Description
MBRF20200CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry.
MBRF20200CT Key Features
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Matched Dual Die Construction
- High Junction Temperature Capability
- High dv/dt Capability
- Guardring for Stress Protection
- Electrically Isolated. No Isolation Hardware Required
- Pb-Free Package is Available
- Case: Epoxy, Molded
- Weight: 1.9 Grams (Approximately)