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MBRF20200CTG Datasheet Schottky Power Rectifier

Manufacturer: onsemi

Overview: Switch-mode Schottky Power Rectifier MBRF20200CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode.

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low.
  • voltage, high.
  • frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features.
  • Highly Stable Oxide Passivated Junction.
  • Very Low Forward Voltage Drop.
  • Matched Dual Die Construction.
  • High Junction Temperature Capability.
  • High dv/dt Capability.
  • Guardring for Stress Protection.

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