MBRF20200CTG Datasheet | onsemi

Switch-mode Schottky Power Rectifier The Switch- mode Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low- voltage, high- frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features - Highly Stable Oxide Passivated Junction - Very Low Forward Voltage Drop - Matched Dual Die Construction - High Junction Temperature Capability - High dv/dt Capability - Guardring for Stress Protection - Epoxy Meets UL 94 V- 0 @ 0.125 in - Electrically Isolated. No Isolation Hardware Required. - These Devices are Pb- Free and are Ro HS pliant Mechanical Characteristics: - Case: Epoxy, Molded - Weight: 1.9 Grams (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds DATA SHEET .onsemi. SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS 1 2 1 2 3 TO- 220 FULLPAKt CASE 221D MARKING DIAGRAM AYWW B20200G A Y WW B20200 G AKA = Assembly Location = Year = Work Week = Device Code = Pb- Free Package = Polarity Designator ORDERING...