MBRF2545CTG Overview
Switch-mode Schottky Power Rectifier MBRF2545CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry.
MBRF2545CTG Key Features
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Matched Dual Die Construction
- High Junction Temperature Capability
- High dv/dt Capability
- Excellent Ability to Withstand Reverse Avalanche Energy Transients
- Guardring for Stress Protection
- Electrically Isolated
- No Isolation Hardware Required
- These Devices are Pb-Free and are RoHS pliant
