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MBRF2545CTG - Switch-mode Schottky Power Rectifier

Key Features

  • epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low.
  • voltage, high.
  • frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features.
  • Highly Stable Oxide Passivated Junction.
  • Very Low Forward Voltage Drop.
  • Matched Dual Die Construction.
  • High Junction Temperature Capability.
  • High dv/dt Capability.
  • Excellent Ability to Withstand.

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Datasheet Details

Part number MBRF2545CTG
Manufacturer onsemi
File Size 167.88 KB
Description Switch-mode Schottky Power Rectifier
Datasheet download datasheet MBRF2545CTG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switch-mode Schottky Power Rectifier MBRF2545CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Very Low Forward Voltage Drop • Matched Dual Die Construction • High Junction Temperature Capability • High dv/dt Capability • Excellent Ability to Withstand Reverse Avalanche Energy Transients • Guardring for Stress Protection • Epoxy Meets UL 94 V−0 @ 0.