Datasheet Summary
Preferred Device
SWITCHMODE™ Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features
- ăHighly Stable Oxide Passivated Junction
- ăVery Low Forward Voltage Drop
- ăMatched Dual Die Construction
- ăHigh Junction Temperature Capability
- ăHigh dv/dt Capability
- ăExcellent Ability to Withstand Reverse Avalanche Energy Transients
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