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MBRF2545CT
Preferred Device
SWITCHMODE™ Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes.
Features
•ăHighly Stable Oxide Passivated Junction •ăVery Low Forward Voltage Drop •ăMatched Dual Die Construction •ăHigh Junction Temperature Capability •ăHigh dv/dt Capability •ăExcellent Ability to Withstand Reverse Avalanche Energy Transients •ăGuardring for Stress Protection •ăEpoxy Meets UL 94 V-0 @ 0.
MBRF2545CT Datasheet
