MBRF2545CT Datasheet and Specifications PDF

The MBRF2545CT is a SWITCHMODE Schottky Power Rectifier.

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Part NumberMBRF2545CT Datasheet
Manufactureronsemi
Overview MBRF2545CT Preferred Device SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art . epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features
*ăHighly Stable Oxide Passivated Junction
*ăVery Low Forward Volta.
Part NumberMBRF2545CT Datasheet
DescriptionDual Common Cathode Schottky Rectifier
ManufacturerTaiwan Semiconductor
Overview Green compound AVERAGE FORWARD CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 30 25 20 15 10 RESISTIVE OR INDUCTIVE LOAD 5 WITH HEATSINK 0 50 60 70 80 90 100 110 120 130 140 150 CASE TEMPERATURE (. - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: ITO-22.
Part NumberMBRF2545CT Datasheet
DescriptionDual Schottky Barrier Rectifiers
ManufacturerGood-Ark Semiconductor
Overview MBR25xxCT, MBRF25xxCT & MBRB25xxCT Series Reverse Voltage 35 to 60 Volts Dual Schottky Barrier Rectifiers Forward Current 25.0 Amperes Features ‹ Plastic package has Underwriters Laboratory Flammabil. ‹ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ‹ Dual rectifier construction, positive center tap ‹ Metal silicon junction, majority carrier conduction ‹ Low power loss, high efficiency ‹ Guardring for overvoltage protection ‹ For use in low voltage, high frequency i.
Part NumberMBRF2545CT Datasheet
DescriptionSWITCHMODE Schottky Power Rectifirer
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRF2545CT/D SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area . epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low
*voltage, high
*frequency switching power supplies, free wheeling diodes and polarity protection diodes.
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* Highly Stable Oxide Passivated Junction Very Low Forwar.