MBRP20035L - Schottky Power Rectifier

onsemi

Key Features

epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.
Very Low Forward Voltage Drop.
Highly Stable Oxide Passivated Junction.
Guardring for Stress Protection.
High dv/dt Capability Mechanical Characteristics:.
Dual Die Construction.
Case: Epoxy, Molded with Plated Copper Heatsink Base.
Weigh.

MBRP20035L schottky power rectifier by onsemi - Datasheet Preview

Datasheet Details

Part number	MBRP20035L
Manufacturer	onsemi
File Size	98.29 KB
Description	Schottky Power Rectifier
Datasheet	MBRP20035L Datasheet

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MBRP20035L SWITCHMODE™ Schottky Power Rectifier POWERTAPE III Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes.