MBRP20060CT Description
MBRP20060CT Preferred Device POWERTAPt II SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal.
MBRP20060CT Key Features
- Dual Diode Construction
- May Be Paralleled for Higher Current
- Output Guardring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Pb-Free Package is Avail
- For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering
- Rev. 4