MBT6429DW1T1 Datasheet | onsemi

Features - Pb- Free Package is Available MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC 6429DW1T1 45 55 6.0 200 Unit Vdc Vdc Vdc m Adc (4) Symbol PD 150 Rq JA TJ, Tstg 833 - 55 to +150 °C/W °C Max Unit m W (3) http://onsemi. (2) (1) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation (Note 1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (5) (6) MARKING DIAGRAM 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum remended foot print. 1 SC- 88 (SOT- 363) 419B 1 1T d 1Td = Specific Device Code = Date Code ORDERING INFORMATION Device MBT6429DW1T1 MBT6429DW1T1G Package SC- 88 SC- 88 (Pb- Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor ponents Industries, LLC, 2004 April, 2004 - Rev. 1 Publication Order Number: MBT6429DW1T1/D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 1.0 m Adc, IB = 0) Collector - Base Breakdown Voltage (IC = 0.1 m Adc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 0.01 m Adc, VCE = 5.0 Vdc) (IC = 0.1 m Adc, VCE = 5.0 Vdc) (IC = 1.0 m Adc, VCE = 5.0 Vdc) (IC = 10 m Adc, VCE = 5.0 Vdc) Collector - Emitter Saturation Voltage (IC = 10 m Adc, IB = 0.5 m Adc) (IC = 100 m Adc, IB = 5.0 m Adc) Base - Emitter On Voltage (IC = 1.0 m Adc, VCE = 5.0 Vdc) SMALL- SIGNAL CHARACTERISTICS Current - Gain - Bandwidth Product (IC = 1.0 m Adc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0,...