MCH3105
Features
- Adoption of FBET, MBIT processes
- Large current capacity
- Low collector-to-emitter saturation voltage
- High-speed switching
- Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)
- High allowable power dissipation
Specifications ( ) : MCH3105
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCES VCEO VEBO IC ICP IB PC Tj
Tstg
Conditions When mounted on ceramic substrate (600mm2×0.8mm)
Ratings (--50)80 (--50)80 (--)50 (--)6 (--)3 (--)6 (--)600 0.8 150
--55 to +150
Unit V V V V A A m A W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended...
