MCH3109
Features
- Adoption of MBIT processes
- Large current capacity
- Low collector-to-emitter saturation voltage
- High-speed switching
- Ultrasmall package facilitates miniaturization in end products (mounting height : 0.85mm)
- High allowable power dissipation
Specifications ( ) : MCH3109
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO IC ICP IB PC Tj
Tstg
Conditions When mounted on ceramic substrate (600mm2×0.8mm)
Ratings (--30)40 (--)30 (--)5 (--)3 (--)5 (--)600 0.8 150
--55 to +150
Unit V V V A A m A W °C °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may...
