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MCH6337 - P-Channel Power MOSFET

Key Features

  • http://onsemi. com Low ON-resistance 1.8V drive Protection diode in.
  • Ultrahigh-speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Con.

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Datasheet Details

Part number MCH6337
Manufacturer onsemi
File Size 567.38 KB
Description P-Channel Power MOSFET
Datasheet download datasheet MCH6337 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0959A MCH6337 P-Channel Power MOSFET –20V, –4.5A, 49mΩ, Single MCPH6 Features • • • http://onsemi.com Low ON-resistance 1.8V drive Protection diode in • • Ultrahigh-speed switching Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Conditions Ratings -20 ±10 -4.5 -18 1.5 150 -55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t Conditions is not implied.