MCH6337 Datasheet PDF (P-Channel Silicon MOSFET)

MCH6337 - P-Channel Silicon MOSFET

Features

Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2✕0.8mm) Ratings --20 ±10 --4.5 --18 1.5 150 --55 to +150 Unit V V A A W °C °C.

Datasheet Details

Part number	MCH6337
Manufacturer	Sanyo
File Size	58.27 KB
Description	P-Channel Silicon MOSFET
Datasheet	MCH6337 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA0959 MCH6337 SANYO Semiconductors DATA SHEET MCH6337 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2✕0.8mm) Ratings --20 ±10 --4.5 --18 1.

Published: Jan 11, 2016 |