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MCH6604 - N-Channel Power MOSFET

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 1.5V drive.
  • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm.

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Datasheet Details

Part number MCH6604
Manufacturer onsemi
File Size 167.58 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MCH6604 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN6459C MCH6604 N-Channel Power MOSFET 50V, 0.25A, 7.8Ω, Dual MCPH6 http://onsemi.com Features • Low ON-resistance • Ultrahigh-speed switching • 1.5V drive • Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm)1unit Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Ratings 50 ±10 0.25 1 0.