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Ordering number:ENN6459
N-Channel Silicon MOSFET
MCH6604
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed swithcing. · 2.5V drive. · Composite type with 2 MOSFETs contained in one package, facilitating high-density mounting.
Package Dimensions
unit:mm 2173
[MCH6604]
0.25 0.3 6 5 4 1.6 2.1 0.15
1
2.0
0.25
2 3 0.65
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 SANYO : MCPH6
0.15
0.85
Ratings 50 ±10 0.25 1 0.