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MCH6660
Power MOSFET
20V, 136mΩ, 2A, –20V, 266mΩ, –1.5A Complementary Dual
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Features
• ON-resistance Nch : RDS(on)1=105mW(typ.) Pch : RDS(on)1=205mW(typ.) • Pb-Free, Halogen Free and RoHS Compliance • Ultrasmall Package MCPH6(2.0mm×2.1mm×0.85mmt) • Nch MOSFET and Pch MOSFET are put in MCPH6 Package
• 1.8V Drive • ESD Diode - Protected Gate
Applications
• General-Purpose Switching Device Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD Tj
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.