Datasheet4U Logo Datasheet4U.com

MCH6660 - N-Channel and P-Channel Silicon MOSFETs

Features

  • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device.

📥 Download Datasheet

Datasheet preview – MCH6660

Datasheet Details

Part number MCH6660
Manufacturer Sanyo Semicon Device
File Size 538.69 KB
Description N-Channel and P-Channel Silicon MOSFETs
Datasheet download datasheet MCH6660 Datasheet
Additional preview pages of the MCH6660 datasheet.

📁 Similar Datasheet

  • MCH6660 - Power MOSFET (ON Semiconductor)
  • MCH6661 - N-Channel Power MOSFET (ON Semiconductor)
  • MCH6662 - Power MOSFET (ON Semiconductor)
  • MCH6663 - Power MOSFET (ON Semiconductor)
  • MCH6664 - P-Channel Power MOSFET (ON Semiconductor)
  • MCH6601 - Ultrahigh-Speed Switching Applications (Sanyo)
  • MCH6602 - Ultrahigh-Speed Switching Applications (Sanyo)
  • MCH6602 - N-Channel Power MOSFET (ON Semiconductor)
  • MCH6603 - Ultrahigh-Speed Switching Applications (Sanyo)
  • MCH6604 - Ultrahigh-Speed Switching Applications (Sanyo)
Other Datasheets by Sanyo Semicon Device
  • MCH6663 - N-Channel and P-Channel Silicon MOSFETs
  • MCH6001 - NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier
  • MCH6406 - Ultrahigh-Speed Switching Applications
  • MCH6412 - N-Channel Silicon MOSFET General-Purpose Switching Device Applications
  • MCH6421 - N-Channel Silicon MOSFET
  • MCH6422 - N-Channel Silicon MOSFET
  • MCH6423 - N-Channel Silicon MOSFET
  • MCH6428 - N-Channel Silicon MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet.co.kr Ordering number : ENA1993 MCH6660 SANYO Semiconductors DATA SHEET MCH6660 Features • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • ON-resistance Nch : RDS(on)1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Conditions N-channel 20 ±10 2 8 0.8 150 --55 to +150 P-channel --20 ±10 --1.5 --6 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7022A-006 2.
Published: |