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MCH6660 - N-Channel and P-Channel Silicon MOSFETs

Key Features

  • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : ENA1993 MCH6660 SANYO Semiconductors DATA SHEET MCH6660 Features • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • ON-resistance Nch : RDS(on)1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Conditions N-channel 20 ±10 2 8 0.8 150 --55 to +150 P-channel --20 ±10 --1.5 --6 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7022A-006 2.