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MCH6663 - Power MOSFET

Features

  • ON-Resistance Nch : RDS(on)1=145mΩ (typ) Pch : RDS(on)1=250mΩ (typ).
  • 4V Drive.
  • Complementary N-Channel and P-Channel MOSFET.
  • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol N-channel P-channel Drain to Source Voltage VDSS 30.
  • 30 Gate to Source Voltage VGSS ±20 ±20 Drain Current (DC) ID 1.8.
  • 1.5 Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 7.2.
  • 6 Power D.

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Datasheet Details

Part number MCH6663
Manufacturer ON Semiconductor
File Size 650.40 KB
Description Power MOSFET
Datasheet download datasheet MCH6663 Datasheet
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Full PDF Text Transcription

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MCH6663 Power MOSFET 30V, 188mΩ, 1.8A, −30V, 325mΩ, −1.5A, Complementary Dual www.onsemi.com Features • ON-Resistance Nch : RDS(on)1=145mΩ (typ) Pch : RDS(on)1=250mΩ (typ) • 4V Drive • Complementary N-Channel and P-Channel MOSFET • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol N-channel P-channel Drain to Source Voltage VDSS 30 −30 Gate to Source Voltage VGSS ±20 ±20 Drain Current (DC) ID 1.8 −1.5 Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 7.2 −6 Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) 1unit Junction Temperature PD Tj 0.8 150 Storage Temperature Tstg −55 to +150 Unit V V A A W °C °C This product is designed to “ESD immunity < 200V*”, so please take care when handling.
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