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MCH6663 - N-Channel and P-Channel Silicon MOSFETs

Key Features

  • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device.

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📁 Similar Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Ordering number : EN8758 MCH6663 SANYO Semiconductors DATA SHEET MCH6663 Features • N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications • • • ON-resistance Nch : RDS(on)1=145mΩ(typ.) Pch : RDS(on)1=250mΩ(typ.) 4V drive Halogen free compliance Nch+Pch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit Conditions N-channel 30 ±20 1.8 7.2 0.8 150 --55 to +150 P-channel --30 ±20 --1.