• Part: MCR16N
  • Description: Reverse Blocking Thyristors
  • Manufacturer: onsemi
  • Size: 99.75 KB
Download MCR16N Datasheet PDF
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MCR16N
MCR16N is Reverse Blocking Thyristors manufactured by onsemi.
Silicon Controlled t4 Rectifiers Reverse Blocking Thyristors Designed primarily for half- wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half- wave, silicon gate- controlled devices are needed. - Blocking Voltage to 800 Volts - On- State Current Rating of 16 Amperes RMS - High Surge Current Capability - 160 Amperes - Rugged Economical TO- 220AB Package - Glass Passivated Junctions for Reliability and Uniformity - Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design - High Immunity to dv/dt - 100 V/µsec Minimum at 125°C - Device Marking: Logo, Device Type, e.g., MCR16N, Date Code Preferred Device U m o .c w w a D . w S a t e e h http://onsemi. SCRs 16 AMPERES RMS 800 VOLT MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off- State Voltage(1) (TJ = - 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR16N On-State RMS Current (180° Conduction Angles; TC = 80°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Symbol VDRM, VRRM 800 IT(RMS) ITSM 16 Value Unit Volts I2t Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range w w .D w PGM t a S a 160 106 5.0 0.5 2.0 e h A A A °C °C t e U 4 .c 2 m o G K 4 A2sec Watts TO- 220AB CASE 221A STYLE 3 PIN...