MCR16N
MCR16N is Reverse Blocking Thyristors manufactured by onsemi.
Silicon Controlled t4 Rectifiers
Reverse Blocking Thyristors
Designed primarily for half- wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half- wave, silicon gate- controlled devices are needed.
- Blocking Voltage to 800 Volts
- On- State Current Rating of 16 Amperes RMS
- High Surge Current Capability
- 160 Amperes
- Rugged Economical TO- 220AB Package
- Glass Passivated Junctions for Reliability and Uniformity
- Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design
- High Immunity to dv/dt
- 100 V/µsec Minimum at 125°C
- Device Marking: Logo, Device Type, e.g., MCR16N, Date Code
Preferred Device
U m o .c w w a D . w
S a t e e h http://onsemi.
SCRs 16 AMPERES RMS 800 VOLT
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off- State Voltage(1) (TJ =
- 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR16N On-State RMS Current (180° Conduction Angles; TC = 80°C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Symbol VDRM, VRRM 800 IT(RMS) ITSM 16 Value Unit Volts
I2t
Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C)
Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range Storage Temperature Range w w
.D w
PGM t a
S a
160 106 5.0 0.5 2.0 e h
A A A °C °C t e
U 4
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2 m o
G K 4
A2sec Watts
TO- 220AB CASE 221A STYLE 3
PIN...