MCR25N - Silicon Controlled Rectifiers

onsemi

Download the MCR25N datasheet PDF. This datasheet also covers the MCR25D variant, as both devices belong to the same silicon controlled rectifiers family and are provided as variant models within a single manufacturer datasheet.

Key Features

Blocking Voltage to 800 Volts.
On-State Current Rating of 25 Amperes RMS.
High Surge Current Capability.
300 Amperes.
Rugged, Economical TO.
220AB Package.
Glass Passivated Junctions for Reliability and Uniformity.
Minimum and Maximum Values of IGT, VGT, and IH Specified for Ease of Design.
High Immunity to dv/dt.
100 V/msec Minimum @ 125°C.
Pb.
Free Packages are Available.

📥 Download Datasheet

MCR25N silicon controlled rectifiers by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MCR25D-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MCR25N
Manufacturer	onsemi
File Size	89.42 KB
Description	Silicon Controlled Rectifiers
Datasheet	MCR25N Datasheet

📁 Similar Datasheet

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MCR25N	SCR	HAOPIN MICROELECTRONICS
MCR25N	SILICON CONTROLLED RECTIFIERS	Digitron Semiconductors
MCR25N	Silicon Controlled Rectifiers	Motorola
MCR25NG	Silicon Controlled Rectifiers	Littelfuse
MCR25	Silicon Controlled Rectifiers	Motorola

Other Datasheets by onsemi

Part Number	Description
MCR25D	Silicon Controlled Rectifiers
MCR25M	Silicon Controlled Rectifiers
MCR218-10FP	Silicon Controlled Rectifier
MCR218-2	(MCR218-x) Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR218-2G	Silicon Controlled Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MCR25D, MCR25M, MCR25N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half−wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half−wave, silicon gate−controlled devices are needed.