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MJB44H11G - PNP Transistor

This page provides the datasheet information for the MJB44H11G, a member of the MJB44H11 PNP Transistor family.

Datasheet Summary

Features

  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 1.0 V (Max) @ 8.0 A.
  • Fast Switching Speeds.
  • Complementary Pairs Simplifies Designs.
  • Epoxy Meets UL 94 V.
  • 0 @ 0.125 in.
  • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V.
  • NJV Prefix for Automotive and Other.

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Datasheet preview – MJB44H11G

Datasheet Details

Part number MJB44H11G
Manufacturer ON Semiconductor
File Size 109.74 KB
Description PNP Transistor
Datasheet download datasheet MJB44H11G Datasheet
Additional preview pages of the MJB44H11G datasheet.

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Full PDF Text Transcription

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MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary Power Transistors D2PAK for Surface Mount Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy Meets UL 94 V−0 @ 0.
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