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MJE210G - Complementary Silicon Power Plastic Transistors

Download the MJE210G datasheet PDF. This datasheet also covers the MJE200G variant, as both devices belong to the same complementary silicon power plastic transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High DC Current Gain.
  • Low Collector.
  • Emitter Saturation Voltage.
  • High Current.
  • Gain.
  • Bandwidth Product.
  • Annular Construction for Low Leakage.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJE200G-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJE210G
Manufacturer onsemi
File Size 208.22 KB
Description Complementary Silicon Power Plastic Transistors
Datasheet download datasheet MJE210G Datasheet

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Other Datasheets by onsemi

Part Number Description
MJE210 Complementary Silicon Power Plastic Transistors
MJE200 Complementary Silicon Power Plastic Transistors
MJE200G Complementary Silicon Power Plastic Transistors
MJE243G Complementary Silicon Power Plastic Transistors
MJE253G Complementary Silicon Power Plastic Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Complementary Silicon Power Plastic Transistors MJE200G (NPN), MJE210G (PNP) These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Symbol Rating Value Unit VCEO VCB VEB IC ICM IB PD Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C 40 Vdc 25 Vdc 8.0 Vdc 5.0 Adc 10 Adc 1.0 Adc 15 W 0.12 mW/_C PD Total Power Dissipation @ TC = 25_C Derate above 25_C 1.5 0.