MJE210G Description
plementary Silicon Power Plastic Transistors MJE200G (NPN), MJE210G (PNP) These devices are designed for low voltage, low−power, high−gain audio amplifier applications.
MJE210G Key Features
- High DC Current Gain
- Low Collector-Emitter Saturation Voltage
- High Current-Gain
- Bandwidth Product
- Annular Construction for Low Leakage
- These Devices are Pb-Free and are RoHS pliant
- Continuous Collector Current
- Peak Base Current Total Power Dissipation
- For additional information on our Pb-Free strategy and soldering details, please download the onsemi Soldering and Mount
- Rev. 16