MJE210 Description
MJE200 - NPN, MJE210 - PNP Preferred Device plementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications.
MJE210 Key Features
- ăCollector-Emitter Sustaining Voltage
- VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
- ăHigh DC Current Gain
- hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc
- ăLow Collector-Emitter Saturation Voltage
- VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
- ăHigh Current-Gain
- Bandwidth Product
- fT = 65 MHz (Min) @ IC = 100 mAdc
- ăAnnular Construction for Low Leakage