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MJE210 - Complementary Silicon Power Plastic Transistors

Download the MJE210 datasheet PDF. This datasheet also covers the MJE200 variant, as both devices belong to the same complementary silicon power plastic transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ăCollector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc.
  • ăHigh DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc.
  • ăLow Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc.
  • ăHigh Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc.
  • ăAnnular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MJE200-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJE210
Manufacturer onsemi
File Size 111.18 KB
Description Complementary Silicon Power Plastic Transistors
Datasheet download datasheet MJE210 Datasheet

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Other Datasheets by onsemi

Part Number Description
MJE210G Complementary Silicon Power Plastic Transistors
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MJE200G Complementary Silicon Power Plastic Transistors
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features •ăCollector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc •ăHigh DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc •ăLow Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.