MJE210 Datasheet | onsemi

MJE200 - NPN, MJE210 - PNP Preferred Device plementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features - ăCollector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc - ăHigh DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc - ăLow Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc - ăHigh Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc - ăAnnular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB - ăPb-Free Packages are Available- MAXIMUM...