| Part Number | MJE210 Datasheet |
|---|---|
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for high gain amplifier applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C) . . |
MJE210 Datasheet and Specifications PDF
The MJE210 is a COMPLEMENTARY SILICON POWER TRANSISTORS.
| Part Number | MJE210 Datasheet |
|---|---|
| Description | Complementary Silicon Power Plastic Transistors |
| Manufacturer | onsemi |
| Overview |
MJE200 - NPN, MJE210 - PNP
Preferred Device
Complementary Silicon Power Plastic Transistors
These devices are Ădesigned for low voltage, low-power, high-gain
audio amplifier applications.
Features
•ă.
*ăCollector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc *ăHigh DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc *ăLow Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2. |
| Part Number | MJE210 Datasheet |
|---|---|
| Description | 5 AMPERE POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE200/D Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applicatio. ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ. |
| Part Number | MJE210 Datasheet |
|---|---|
| Description | SILICON PNP TRANSISTOR |
| Manufacturer | STMicroelectronics |
| Overview | )The MJE210 is a silicon Epitaxial-Base PNP t(stransistor in Jedec SOT-32 plastic package, cdesigned for low voltage, low power, high gain Produ t(s)audio amplifier applications. 1 2 3 SOT-32 ) - Ob. . |