MJE700G - Plastic Darlington Complementary Silicon Power Transistors

Datasheet Summary

Features

High DC Current Gain.
hFE = 2000 (Typ) @ IC = 2.0 Adc.
Monolithic Construction with Built.
in Base.
Emitter Resistors to Limit Leakage.
Multiplication.
Choice of Packages.
MJE700 and MJE800 Series.
These Devices are Pb.
Free and are RoHS Compliant.

ON Semiconductor

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Datasheet Details

Part number	MJE700G
Manufacturer	ON Semiconductor
File Size	125.95 KB
Description	Plastic Darlington Complementary Silicon Power Transistors
Datasheet	MJE700G Datasheet
Additional preview pages of the MJE700G datasheet.

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MJE700G, MJE702G, MJE703G (PNP), MJE800G, MJE802G, MJE803G (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.

Published: Oct 24, 2016 |